(China (Mainland))
Product Summary
4Mbit Asynchronous F-RAM Memory
Parametrics
4Mbit Ferroelectric Nonvolatile RAM
? Organized as 256Kx16
? Configurable as 512Kx8 Using /UB, /LB
? 1014 Read/Write Cycles
? NoDelay? Writes
? Page Mode Operation to 40MHz
? Advanced High-Reliability Ferroelectric Process
SRAM Compatible
? JEDEC 256Kx16 SRAM Pinout
? 55 ns Access Time, 110 ns Cycle Time
Advanced Features
? Software Programmable Block Write Protect
Superior to Battery-backed SRAM Modules
? No Battery Concerns
? Monolithic Reliability
? True Surface Mount Solution, No Rework Steps
? Superior for Moisture, Shock, and Vibration
Low Power Operation
? 2.7V – 3.6V Power Supply
? Low Current Mode (5μA) using ZZ pin
? Low Active Current (8 mA typ.)
Industry Standard Configuration
? Industrial Temperature -40° C to +85° C
? 44-pin “Green”/RoHS TSOP-II package
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FM22L16-55-TG |
Ramtron |
F-RAM 4M (256Kx16) 55ns F-RAM |
Data Sheet |
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FM22L16-55-TGTR |
Ramtron |
F-RAM 4M (256Kx16) 55ns F-RAM |
Data Sheet |
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